symbol test conditions maximum ratings i frms t vj = t vjm 30 a i f(av)m t case = 100 c; 180 sine 2 x 11 a i fsm t vj = 45 c; t = 10 ms (50 hz), sine 100 a t = 8.3 ms (60 hz), sine 105 a t vj = 150 c; t = 10 ms (50 hz), sine 85 a t = 8.3 ms (60 hz), sine 90 a i 2 t t vj = 45 c t = 10 ms (50 hz), sine 50 a 2 s t = 8.3 ms (60 hz), sine 45 a 2 s t vj = 150 c; t = 10 ms (50 hz), sine 35 a 2 s t = 8.3 ms (60 hz), sine 30 a 2 s t vj -40...+150 c t vjm 150 c t stg -55...+150 c t l 1.6 mm (0.063 in) from case for 10 s 260 c v isol 50/60 hz rms; i isol 1 ma 2500 v~ f c mounting force 11...65 / 2.5..15 n/lb weight 2g symbol test conditions characteristic values i r c v r = v rrm; t vj = 25 c 10 a t vj = 150 c 0.7 ma v f d i f = 10 a; t vj = 25 c 1.22 v t vj = 125 c 1.26 v v t0 for power-loss calculations only 0.8 v r t t vj = t vjm 41 m ? r thjc dc current 1.8 k/w r thck dc current (with heatsink compound) typ. 0.6 k/w a maximum allowable acceleration 100 m/s 2 ds98820(07/03) ? 2003 ixys all rights reserved dsp 8 v rrm = 800/1200 v i f(av)m = 2 x 11 a phase-leg rectifier diode isoplus220 tm electrically isolated back surface 1 2 3 features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z for single and three phase bridge configuration z low cathode to tab capacitance (<15pf) z planar passivated chips z epoxy meets ul 94v-0 notes: data given for t vj = 25 o c and per diode unless otherwise specified c pulse test: pulse width = 5 ms, duty cycle < 2.0 % d pulse test: pulse width = 300 s, duty cycle < 2.0 % ixys reserves the right to change limits, test conditions and dimensions. v rsm v rrm type v v 900 800 dsp 8-08ac 1300 1200 dsp 8-12ac preliminary data sheet isoplus 220 tm isolated back surface* isoplus220 outline e153432
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